STD123 [BL Galaxy Electrical]
Silicon Epitaxial Planar Transistor; 硅外延平面晶体管
| 型号： | STD123 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
STD123
FEATURES
Pb
z
z
z
z
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Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : RON=0.6Ω(Max.) (IB=1mA）
Lead-free
APPLICATIONS
SOT-23
z
NPN Silicon Epitaxial Planar Transistor
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Audio frequency general purpose amplifier.
ORDERING INFORMATION
Type No.
STD123
Marking
123
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
15
6.5
1
V
V
Collector Current -Continuous
Collector Dissipation
A
PC
350
mW
℃
Junction and Storage Temperature
Tj,Tstg
-55~150
Document number: BL/SSSTC088
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
STD123
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=50μA,IE=0
IC=1mA,IB=0
IE=50μA,IC=0
VCB=20V,IE=0
20
V
V
V
15
6.5
0.1
0.1
μA
μA
Emitter cut-off current
DC current gain
IEBO
VEB=6V,IC=0
hFE
VCE=1V,IC=100mA
IC=500mA, IB=50mA
VCE=5V, IC= 50mA
150
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
0.3
V
fT
260
MHz
Collector output capacitance
On resistance
VCB=10V,IE=0,f=1MHz
Cob
5
pF
f=1KHz,IB=1mA,VIN=0.3V
RON
0.6
ꢀ
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC088
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
STD123
Document number: BL/SSSTC088
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
STD123
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
B
K
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
H
J
G
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
STD123
3000/Tape&Reel
Document number: BL/SSSTC088
Rev.A
www.galaxycn.com
4
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